Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

被引：20

作者：

Smith, SR ^{[1
]}

Evwaraye, AO ^{[1
]}

Mitchel, WC ^{[1
]}

机构：

[1] MLPO,WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.360944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the temperature dependence of the barrier height of Al, Ag, Au, and W metal-semiconductor contacts on n-type 6H-SiC, and Al and Ag metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the reverse biased capacitance-voltage characteristics of the contacts at temperatures ranging from 300 to 670 K. The measurements were made at 1 MHz. These measurements were compared to the behavior predicted by standard models. All the diodes displayed a negative temperature dependence on n-type SiC, and a positive temperature dependence on p-type SiC. The temperature coefficient is related to the electronegativity of the metal by linear expression.

引用

页码：301 / 304

页数：4

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