Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

被引:20
|
作者
Smith, SR [1 ]
Evwaraye, AO [1 ]
Mitchel, WC [1 ]
机构
[1] MLPO,WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433
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D O I
10.1063/1.360944
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have examined the temperature dependence of the barrier height of Al, Ag, Au, and W metal-semiconductor contacts on n-type 6H-SiC, and Al and Ag metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the reverse biased capacitance-voltage characteristics of the contacts at temperatures ranging from 300 to 670 K. The measurements were made at 1 MHz. These measurements were compared to the behavior predicted by standard models. All the diodes displayed a negative temperature dependence on n-type SiC, and a positive temperature dependence on p-type SiC. The temperature coefficient is related to the electronegativity of the metal by linear expression.
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页码:301 / 304
页数:4
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