Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC

被引:20
|
作者
Smith, SR [1 ]
Evwaraye, AO [1 ]
Mitchel, WC [1 ]
机构
[1] MLPO,WRIGHT LAB,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1063/1.360944
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have examined the temperature dependence of the barrier height of Al, Ag, Au, and W metal-semiconductor contacts on n-type 6H-SiC, and Al and Ag metal-semiconductor contacts on p-type 6H-SiC. The barrier height was determined from the reverse biased capacitance-voltage characteristics of the contacts at temperatures ranging from 300 to 670 K. The measurements were made at 1 MHz. These measurements were compared to the behavior predicted by standard models. All the diodes displayed a negative temperature dependence on n-type SiC, and a positive temperature dependence on p-type SiC. The temperature coefficient is related to the electronegativity of the metal by linear expression.
引用
收藏
页码:301 / 304
页数:4
相关论文
共 50 条
  • [41] Nonuniformities in metal-semiconductor contacts
    Chaika, GE
    Konakova, RV
    Lyapin, VG
    Milenin, VV
    Soloviev, EA
    Voitsikhovskyi, DI
    Boltovets, NS
    Ivanov, VN
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 167 - 170
  • [42] FORMING OF METAL-SEMICONDUCTOR CONTACTS
    SHEVCHENKO, VY
    SKRIPKIN, VA
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1969, (03): : 758 - +
  • [43] Temperature dependence of performance of 6H-SiC unipolar power devices
    He, Jin
    Zhang, Xing
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (10): : 1235 - 1239
  • [44] Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector
    陈斌
    杨银堂
    李跃进
    刘红霞
    Journal of Semiconductors, 2010, (06) : 65 - 69
  • [45] Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector
    Chen Bin
    Yang Yintang
    Li Yuejin
    Liu Hongxia
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (06)
  • [46] STUDY OF METAL-SEMICONDUCTOR CONTACTS
    TANTRAPORN, W
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 331 - +
  • [47] OHMIC METAL-SEMICONDUCTOR CONTACTS
    GOSSICK, BR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
  • [48] Effects of temperature and crucible height on the synthesis of 6H-SiC nanowires and nanoneedles
    Cheong, K. Y.
    Lockman, Z.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 481 (1-2) : 345 - 348
  • [49] BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTS - METAL INDUCED SURFACE AND INTERFACE STATES
    MONCH, W
    SCIENCE OF SUPERCONDUCTIVITY AND NEW MATERIALS, 1989, 18 : 298 - 308
  • [50] Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer
    Moscatelli, F
    Scorzoni, A
    Poggi, A
    Canino, M
    Nipoti, R
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 737 - 740