Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa1-xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy

被引：3

作者：

Seo, Hye-Won ^{[1
]}

Hamad, Samir M. ^{[1
]}

Norman, Dever P. ^{[1
]}

Keles, Filiz ^{[1
]}

Chen, Quark Y. ^{[2
,3
,4
,5
]}

机构：

[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[4] Univ Houston, Dept Phys, Houston, TX 77204 USA

[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

基金：

美国国家科学基金会;

关键词：

INGAN; GAN; DECOMPOSITION; STRAIN; LUMINESCENCE; DISSOCIATION; KINETICS; TENSILE; ALLOYS; FILMS;

D O I：

10.7567/APEX.6.111003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The active species of nitrogen plasma was found to add onto the phase separation and atomic ordering of InxGa1-xN nanorods obtained by rf plasma-assisted molecular beam epitaxy. Optical emission spectroscopy identifies the species and their populations at various energy states in association with the obtained decomposed phases discerned by photoluminescence spectroscopy. The rate of change of the concurring phase separation and ordering processes of the alloys is a nonlinear function of the plasma power, which is describable with a microscopic master equation in the context of enhanced chemical reactions and surface diffusion. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[1] Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy
Webster, R. F.
Soundararajah, Q. Y.
Griffiths, I. J.
Cherns, D.
Novikov, S. V.
Foxon, C. T.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (11)
[2] High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films
Jorgensen, Kelsey F.
Bonef, Bastien
Speck, James S.
[J]. JOURNAL OF CRYSTAL GROWTH, 2020, 546
[3] Characterization of zinc blende InxGa1-xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)
Mullhauser, JR
Jenichen, B
Wassermeier, M
Brandt, O
Ploog, KH
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (07) : 909 - 911
[4] GOOD OPTICAL QUALITY InxGa1-xN THIN FILMS GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
Ramizy, A.
Hammed, M. G.
Al-Jumaili, M. H.
Hasssan, Z.
[J]. JOURNAL OF NON-OXIDE GLASSES, 2018, 10 (02): : 43 - 48
[5] InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with Growth Rates Up to 1.3 μm/hr
Jorgensen, Kelsey F.
Speck, James S.
[J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
[6] Plasma-Assisted Molecular Beam Epitaxy of InXGa1-XN Films on C-plane Sapphire Substrates
Shin, Eun-Jung
Seok, Lim Dong
Lim, Se Hwan
Han, Seok Kyu
Lee, Hyosung
Hong, Soon-Ku
Joeng, Myoungho
Lee, Jeong Yong
Yao, Takafumi
[J]. KOREAN JOURNAL OF MATERIALS RESEARCH, 2012, 22 (04): : 185 - 189
[7] Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy
Fong, WK
Zhu, CF
Leung, BH
Surya, C
Sundaravel, B
Luo, EZ
Xu, JB
Wilson, IH
[J]. MICROELECTRONICS RELIABILITY, 2002, 42 (08) : 1179 - 1184
[8] Pre-nitridation induced In incorporation in InxGa1-xN nanorods on Si(111) grown by molecular beam epitaxy
De, Arpan
Tangi, Malleswararao
Shivaprasad, S. M.
[J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (02)
[9] Influence of the atom source operating parameters on the structural and optical properties of InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy
Hille, P.
Walther, F.
Klement, P.
Mussener, J.
Schoermann, J.
Kaupe, J.
Mitic, S.
Rosemann, N. W.
Chatterjee, S.
Beyer, A.
Gries, K. I.
Volz, K.
Eickhoff, M.
[J]. JOURNAL OF APPLIED PHYSICS, 2018, 124 (16)
[10] Spontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy
De, Arpan
Nagaraja, K. K.
Tangi, Malleswararao
Shivaprasad, S. M.
[J]. MATERIALS RESEARCH EXPRESS, 2014, 1 (03):

← 1 2 3 4 5 →