Nitrogen-Plasma Energetics Effect on Phase Separation of InxGa1-xN Nanorods Grown by RF-Plasma Assisted Molecular Beam Epitaxy

被引：3
|
作者：
Seo, Hye-Won [1 ]
Hamad, Samir M. [1 ]
Norman, Dever P. [1 ]
Keles, Filiz [1 ]
Chen, Quark Y. [2 ,3 ,4 ,5 ]
机构：
[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan
[4] Univ Houston, Dept Phys, Houston, TX 77204 USA
[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
来源：
APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期
基金：
美国国家科学基金会;
关键词：
INGAN; GAN; DECOMPOSITION; STRAIN; LUMINESCENCE; DISSOCIATION; KINETICS; TENSILE; ALLOYS; FILMS;
D O I：
10.7567/APEX.6.111003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The active species of nitrogen plasma was found to add onto the phase separation and atomic ordering of InxGa1-xN nanorods obtained by rf plasma-assisted molecular beam epitaxy. Optical emission spectroscopy identifies the species and their populations at various energy states in association with the obtained decomposed phases discerned by photoluminescence spectroscopy. The rate of change of the concurring phase separation and ordering processes of the alloys is a nonlinear function of the plasma power, which is describable with a microscopic master equation in the context of enhanced chemical reactions and surface diffusion. (C) 2013 The Japan Society of Applied Physics
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页数：4
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