Spontaneous core-shell elemental distribution in In-rich InxGa1-xN nanowires grown by molecular beam epitaxy

被引:15
|
作者
Gomez-Gomez, M. [1 ]
Garro, N. [1 ]
Segura-Ruiz, J. [2 ]
Martinez-Criado, G. [2 ]
Cantarero, A. [1 ]
Mengistu, H. T. [1 ]
Garcia-Cristobal, A. [1 ]
Murcia-Mascaros, S. [1 ]
Denker, C. [3 ]
Malindretos, J. [3 ]
Rizzi, A. [3 ]
机构
[1] Univ Valencia, Inst Ciencia Mat, E-46980 Paterna, Valencia, Spain
[2] European Synchrotron Radiat Facil, Expt Div, F-38043 Grenoble, France
[3] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
关键词
nanowire; alloy; Raman scattering; x-ray fluorescence; EDX; GAN; STRAIN;
D O I
10.1088/0957-4484/25/7/075705
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The elemental distribution of self-organized In-rich InxGa1-xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated using three different techniques with spatial resolution on the nanoscale. Two-dimensional images and elemental profiles of single nanowires obtained by x-ray fluorescence and energy-dispersive x-ray spectroscopy, respectively, have revealed a radial gradient in the alloy composition of each individual nanowire. The spectral selectivity of resonant Raman scattering has been used to enhance the signal from very small volumes with different elemental composition within single nanowires. The combination of the three techniques has provided sufficient sensitivity and spatial resolution to prove the spontaneous formation of a core-shell nanowire and to quantify the thicknesses and alloy compositions of the core and shell regions. A theoretical model based on continuum elastic theory has been used to estimate the strain fields present in such inhomogeneous nanowires. These results suggest new strategies for achieving high quality non-polar heterostructures.
引用
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页数:10
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