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- [35] Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
- [38] Spontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy MATERIALS RESEARCH EXPRESS, 2014, 1 (03):
- [40] Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x∼0.67) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (12): : 2737 - 2740