Characterization of zinc blende InxGa1-xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)

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作者：
Mullhauser, JR
Jenichen, B
Wassermeier, M
Brandt, O
Ploog, KH
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APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期
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O59 [应用物理学];
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摘要：
Successful growth of a cubic In0.17Ga0.83N/GaN structure exhibiting blue luminescence at temperatures up to 500 K is reported. Atomic force microscopy and x-ray diffraction are used to analyze the morphological and crystalline properties of the sample. Photoluminescence measurements reveal broad, but well defined emission with a maximum at 440-450 nm in the temperature range of 5-500 K. A line-shape analysis of the spectra, as well as measurements of the absorption coefficient, allow an estimation of the band-gap energy of the cubic In0.17Ga0.83N epilayer. (C) 1997 American Institute of Physics.
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页码：909 / 911
页数：3
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