Properties of amorphous WNx thin films prepared by RF magnetron sputtering

被引：0

作者：

Han, KY ^{[1
]}

Choi, BH ^{[1
]}

机构：

[1] Kumoh Natl Univ Technol, Sch Adv Mat & Syst Engn, Kumi 730701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1999年 / 35卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Amorphous WNx thin films were prepared as X-ray absorbers by using RF magnetron sputtering. The possibilities of anisotropic etching for the;films are studied as functions of the CHF3 concentration and other etching parameters by using ion etching equipment. Anisotropic etching profiles are achieved for the films prepared at a CHF3/SF6 ratio of similar or equal to 0.5/0.5 in Ar, a working pressure of similar or equal to 200 mTorr, an RF power density of 0.39 W/cm(2) and room temperature. From an analysis of X-ray Photoelectron Spectroscopy (XPS), it is concluded that the anisotropic etching profiles are caused by an inhibitor composed of carbon compounds on the side walls of WNx films.

引用

页码：S618 / S621

页数：4

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