Properties of ITO films prepared by rf magnetron sputtering

被引：0
|
作者：
El Akkad, F [1 ]
Punnoose, A [1 ]
Prabu, G [1 ]
机构：
[1] Kuwait Univ, Dept Phys, Fac Sci, Kuwait, Kuwait
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 02期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recently, a detailed study of the properties of ITO thin films deposited under various preparation conditions using the rf magnetron sputtering technique (from ITO target in pure Ar gas) has been undertaken in our laboratory. The effect of substrate temperature has been studied in a previous paper. Here the results of a study of the structural, electrical and optical properties of the ITO films with different thickness are presented. The figure of merit for the films, which is a measure of the quality of the films as transparent conductive layers for photovoltaic applications, has been evaluated.
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页码：157 / 160
页数：4
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