Gas sensing properties of ZnO:Al thin films prepared by RF magnetron sputtering

被引：0
|
作者：
Teoh, Lay Gaik [1 ]
Chen, Hong Ming [1 ]
Su, Yen Hsun [2 ]
Lai, Wei Hao [2 ]
Chou, Shih Min [2 ]
Hon, Min Hsiung [2 ]
机构：
[1] Natl Pintung Univ Sci & Technol, Dept Mech Engn, 1 Sheuhfu Rd, Neipu 91201, Pintung, Taiwan
[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
来源：
2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/SMELEC.2006.381036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was similar to 20 at an operating temperature of 250 square. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.
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收藏
页码：142 / +
页数：3
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