Characteristics of ZnO:In thin films prepared by RF magnetron sputtering

被引：39
|
作者：
Peng, L. P. [1 ]
Fang, L. [1 ,2 ]
Yang, X. F. [1 ]
Ruan, H. B. [1 ,3 ]
Li, Y. J. [1 ]
Huang, Q. L. [1 ]
Kong, C. Y. [3 ]
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400030, Peoples R China
[2] Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400030, Peoples R China
[3] Chongqing Normal Univ, Dept Appl Phys, Chongqing 400047, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 10期
关键词：
ZnO:In thin films; RF magnetron sputtering; Optical and electrical properties; OPTICAL-PROPERTIES; GROWTH;
D O I：
10.1016/j.physe.2009.07.006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 degrees C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4 x 10(-3) Omega cm. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1819 / 1823
页数：5
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