V-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

The V-doped ZnO thin films were prepared on Pt/TiO2/SiO2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.