Self-heating effect in SOI MOSFET's

被引：11
|
作者：
Sun, ZM [1 ]
Liu, LT [1 ]
Li, ZJ [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.785951
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating effect in SOI MOSFET's affects the carrier mobility, SOI MOSFET's threshold voltage and the band gap of silicon in channel. The machanism of heat generation and heat dissipation in SOI MOSFET's is analyzed in this paper on the basis of which a simple self-heating effect model is established. The model introduces only one factor related with self-heating effect whose value can be easily determined according to the device structure parameters. The model is also verified experimentally.
引用
收藏
页码：572 / 574
页数：3
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