Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

被引：2

作者：

Atamuratov, A. E. ^{[1
]}

Jabbarova, B. O. ^{[1
]}

Khalilloev, M. M. ^{[1
]}

Yusupov, A. ^{[2
]}

Loureriro, A. G. ^{[3
]}

机构：

[1] Urgench State Univ, Phys Dept, Urgench, Uzbekistan

[2] Tashkent Univ Informat Technol, Dept Elect & Elect Engn, Tashkent, Uzbekistan

[3] Univ Santiago de Compostella, Dept Elect & Comp Sci, Santiago De Compostella, Spain

来源：

PROCEEDINGS OF THE 2021 13TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2021年

关键词：

Junctionless FinFET; self-heating effect; thermal conductivity; lattice temperature; channel cross section shape; TRANSISTORS;

D O I：

10.1109/CDE52135.2021.9455728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we study the self-heating effect (SHE) in nanoscale Silicon on Insulator Junctionless (SOI JL) FinFET transistor with fin cross section in rectangular, trapeze and triangle form. The lattice temperature dependence on the channel length as well as on buried oxide thickness is considered. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Also, we have found at the same conditions the lattice temperature depends on shape of channel cross section too.

引用

页码：62 / 64

页数：3

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