Thermal analysis of self-heating in saddle MOSFET devices

被引：0

作者：

Oh, Hyun Gon ^{[1
]}

Jeong, Cherlhyun ^{[2
]}

Cho, Il Hwan ^{[1
]}

机构：

[1] Myongji Univ, Dept Elect Engn, Yongin 449728, Gyeonggi, South Korea

[2] Korea Inst Sci & Technol, Ctr Theragnosis, Seoul 130650, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.7567/JJAP.53.020303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-heating effects (SHEs) of saddle metal oxide semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon and other materials. Thermal characteristics were analyzed by thermal resistance of Si channel. Since Si material has larger thermal conductivity than that of silicon dioxide, it is shown that the length of the side gate of saddle MOSFETs determines heat dissipation of Si channel. Side gate of saddle MOSFETs can be one of the important parameter in device optimization. (C) 2014 The Japan Society of Applied Physics

引用

页数：3

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