A 3.6 mW, 90 nm CMOS Gated-Vernier Time-to-Digital Converter With an Equivalent Resolution of 3.2 ps

被引:76
|
作者
Lu, Ping [1 ]
Liscidini, Antonio [1 ]
Andreani, Pietro [1 ]
机构
[1] Univ Pavia, Dept Elect Engn, I-27100 Pavia, Italy
关键词
Gated ring oscillator; time-to-digital converter; Vernier delay line; PHASE-LOCKED LOOP; PLL;
D O I
10.1109/JSSC.2012.2191676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two gated ring oscillators (GROs) act as the delay lines in an improved Vernier time-to-digital converter (TDC), where the already small quantization noise of the standard Vernier TDC is further first-order shaped by the GRO operation. The TDC has been implemented in a 90 nm CMOS process and consumes 3 mA from 1.2 V when operating at 25 MHz. The native Vernier resolution of the TDC is 5.8 ps, while the total noise integrated over a bandwidth of 800 kHz yields an equivalent TDC resolution of 3.2 ps.
引用
下载
收藏
页码:1626 / 1635
页数:10
相关论文
共 50 条
  • [21] Successive Approximation Time-to-Digital Converter with Vernier-level Resolution
    Jiang, Richen
    Li, Congbing
    Yang, MingCong
    Kobayashi, Haruo
    Ozawa, Yuki
    Tsukiji, Nobukazu
    Hirano, Mayu
    Shiota, Ryoji
    Hatayama, Kazumi
    PROCEEDINGS OF THE 2016 IEEE 21ST INTERNATIONAL MIXED-SIGNALS TEST WORKSHOP (IMSTW), 2016,
  • [22] Time of arrival measurement using ring oscillator-based Vernier time-to-digital converter in 28 nm CMOS
    Kadlubowski, Lukasz A.
    Kmon, Piotr
    PRZEGLAD ELEKTROTECHNICZNY, 2020, 96 (12): : 115 - 118
  • [23] A 14-b, 0.1ps Resolution Coarse-Fine Time-to-Digital Converter in 45 nm CMOS
    Huang, Huihua
    Sechen, Carl
    2014 IEEE DALLAS CIRCUITS AND SYSTEMS CONFERENCE (IEEE DCAS 2014), 2014,
  • [24] 22 μW, 5.1 ps LSB, 5.5 ps RMS jitter Vernier time-to-digital converter in CMOS 65 nm for single photon avalanche diode array
    Nolet, F.
    Roy, N.
    Carrier, S.
    Bouchard, J.
    Fontaine, R.
    Charlebois, S. A.
    Pratte, J. -F.
    ELECTRONICS LETTERS, 2020, 56 (09) : 424 - 425
  • [25] The Design of a 0.15 ps High Resolution Time-to-Digital Converter
    Lee, Jongsuk
    Moon, Yong
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (03) : 334 - 341
  • [26] Monolithic time-to-digital converter with 20ps resolution
    Tisa, S
    Lotito, A
    Giudice, A
    Zappa, F
    ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 465 - 468
  • [27] A 19.5 ps-LSB Vernier-type Time-to-digital Converter for PET
    Kim, Min-Sik
    Cho, Kang-Il
    Kwak, Yong-Sik
    Lee, Sangwon
    Choi, Jaewoo
    Ahn, Gil-Cho
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17 (06) : 800 - 805
  • [28] 250-ps time-resolution CMOS multihit time-to-digital converter for nuclear physics experiments
    Telecomunicazioni Univ of Pisa, Pisa, Italy
    IEEE Trans Nucl Sci, 2 (73-77):
  • [29] A 250-ps time-resolution CMOS multihit time-to-digital converter for nuclear physics experiments
    Bigongiari, F
    Roncella, R
    Saletti, R
    Terreni, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (02) : 73 - 77
  • [30] A 9-bit Body-biased Vernier Ring Time-to-Digital Converter in 65 nm CMOS Technology
    Kong, Junjie
    Siek, Liter
    Kok, Chiang-Liang
    2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2015, : 1650 - 1653