Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures -: art. no. 161306

被引：94

作者：

Lo, I ^{[1
]}

Tsai, JK

Yao, WJ

Ho, PC

Tu, LW

Chang, TC

Elhamri, S

Mitchel, WC

Hsieh, KY

Huang, JH

Huang, HL

Tsai, WC

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] USAF, Res Lab, MLPS, Wright Patterson AF Base, Dayton, OH 45433 USA

[3] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

[4] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.65.161306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.

引用

页码：1 / 4

页数：4

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