Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1-xN/GaN heterostructures with two subbands occupation

被引：16
|
作者：
Lu, J [1 ]
Shen, B
Tang, N
Chen, DJ
Zhao, H
Liu, DW
Zhang, R
Shi, Y
Zheng, YD
Qiu, ZJ
Gui, YS
Zhu, B
Yao, W
Chu, JH
Hoshino, K
Arakawa, Y
机构：
[1] Nanjing Univ, Jiangsu Prov Key Lab Photon & Elect Mat Sci & Tec, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan
[6] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 153, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
D O I：
10.1063/1.1803949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Weak anti-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single heterostructure has been investigated through magnetoresistance measurements at low temperatures. The elastic scattering time tau(e), dephasing time tau(phi) and spin-orbit scattering time tau(so) at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the weak anti-localization is observed clearly, which is thought to be due to the strong spin-orbit effect induced by the intersubband scattering. The spin-orbit effect and the intersubband scattering become stronger with increasing temperature. (C) 2004 American Institute of Physics.
引用
收藏
页码：3125 / 3127
页数：3
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