Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures -: art. no. 161306

被引：94
|
作者：
Lo, I [1 ]
Tsai, JK
Yao, WJ
Ho, PC
Tu, LW
Chang, TC
Elhamri, S
Mitchel, WC
Hsieh, KY
Huang, JH
Huang, HL
Tsai, WC
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[2] USAF, Res Lab, MLPS, Wright Patterson AF Base, Dayton, OH 45433 USA
[3] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan
[4] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.65.161306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.
引用
收藏
页码：1 / 4
页数：4
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