Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures -: art. no. 161306

被引：94
|
作者：
Lo, I [1 ]
Tsai, JK
Yao, WJ
Ho, PC
Tu, LW
Chang, TC
Elhamri, S
Mitchel, WC
Hsieh, KY
Huang, JH
Huang, HL
Tsai, WC
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[2] USAF, Res Lab, MLPS, Wright Patterson AF Base, Dayton, OH 45433 USA
[3] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan
[4] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.65.161306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. Two SdH oscillations were detected on the samples of x=0.35 and 0.31, due to the population of the first two subbands with the energy separations of 128 and 109 meV, respectively. For the sample of x=0.25, two SdH oscillations beat each other, probably due to a finite zero-field spin splitting. The spin-splitting energy is equal to 9.0 meV. The samples also showed a persistent photoconductivity effect after illuminating by blue light-emitting diode.
引用
收藏
页码：1 / 4
页数：4
相关论文
共 50 条
  • [21] Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys -: art. no. 123705
    Liu, WL
    Balandin, AA
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)
  • [22] Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction -: art. no. 195320
    Shields, PA
    Nicholas, RJ
    Takashina, K
    Grandjean, N
    Massies, J
    PHYSICAL REVIEW B, 2002, 65 (19): : 1953201 - 1953205
  • [23] Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells -: art. no. 075311
    Natali, F
    Byrne, D
    Leroux, M
    Damilano, B
    Semond, F
    Le Louarn, A
    Vezian, S
    Grandjean, N
    Massies, J
    PHYSICAL REVIEW B, 2005, 71 (07):
  • [24] Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN heterostructures -: art. no. 045316
    Gurusinghe, MN
    Davidsson, SK
    Andersson, TG
    PHYSICAL REVIEW B, 2005, 72 (04)
  • [25] Polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling
    Zhou, YG
    Shen, B
    Yu, HQ
    Liu, J
    Zhou, HM
    Zhang, R
    Shi, Y
    Zheng, YD
    Someya, T
    Arakawa, Y
    CHINESE PHYSICS LETTERS, 2002, 19 (08) : 1172 - 1175
  • [26] Spin splitting in AlxGa1-xN/GaN quasiballistic quantum wires
    Lo, Ikai
    Chen, Y. L.
    Pang, W. Y.
    Hsu, Y. C.
    Chiang, Jih-Chen
    Yang, C. C.
    Su, J. Y.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)
  • [27] Exchange Enhancement of Spin-Splitting in AlxGa1-xN/GaN Heterostructures in Tilted Magnetic Fields
    Tang Ning
    Han Kui
    Lu Fang-Chao
    Duan Jun-Xi
    Xu Fu-Jun
    Shen Bo
    CHINESE PHYSICS LETTERS, 2011, 28 (03)
  • [28] Zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions
    Tang, Ning
    Shen, Bo
    Han, Kui
    Lu, Fang-Chao
    Xu, Fu-Jun
    Qin, Zhi-Xin
    Zhang, Guo-Yi
    APPLIED PHYSICS LETTERS, 2008, 93 (17)
  • [29] Influence of AlxGa1-xN thickness on transport properties of a two-dimensional electron gas in modulation doped AlxGa1-xN/GaN single heterostructures
    Shen, B
    Someya, T
    Nishioka, M
    Arakawa, Y
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 755 - 759
  • [30] Pt/Au Schottky contacts to modulation-doped AlxGa1-xN/GaN heterostructures using pre-deposition surface treatment
    Liu, J
    Shen, B
    Wang, MJ
    Zhou, YG
    Zheng, ZW
    Zhang, R
    Shi, Y
    Zheng, YD
    Someya, T
    Arakawa, Y
    CHINESE PHYSICS LETTERS, 2002, 19 (12) : 1853 - 1855
12345