Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k.p method\

被引：9
|
作者：
Chen, Baile [1 ]
Holmes, A. L., Jr. [1 ]
Khalfin, Viktor [2 ]
Kudryashov, Igor [2 ]
Onat, Bora. M. [2 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA
来源：
LASER TECHNOLOGY FOR DEFENSE AND SECURITY VIII | 2012年 / 8381卷
关键词：
k.p method; Type-II Quantum Well; Laser diode; Mid-infrared; optical gain;
D O I：
10.1117/12.918764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k . p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5x10(12) cm(-2), peak gain values around 2.6-2.7 mu m wavelengths of the order of 1000 cm(-1) can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2 mu m at room temperature.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] GaAsSb/GaAs type-II quantum well and its application on ∼1.3 μm laser
    Lin, HH
    Liu, PW
    Chen, JR
    PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 112 - 115
  • [22] Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots
    Briggs, Andrew F.
    Nordin, Leland J.
    Muhowski, Aaron J.
    Petluru, Priyanka
    Silva, David
    Wasserman, Daniel
    Bank, Seth R.
    APPLIED PHYSICS LETTERS, 2020, 116 (06)
  • [23] Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon
    Delli, E.
    Hodgson, P. D.
    Bentley, M.
    Repiso, E.
    Craig, A. P.
    Lu, Q.
    Beanland, R.
    Marshall, A. R. J.
    Krier, A.
    Carrington, P. J.
    APPLIED PHYSICS LETTERS, 2020, 117 (13)
  • [24] Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates
    Kawamura, Y.
    Shishido, I.
    Tanaka, S.
    Kawamata, S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
  • [25] Annealing effects on the electroluminescence of InGaAsN/GaAsSb Type-II Quantum Well Diodes Grown on InP Substrates
    Kawamura, Yuichi
    Shishido, Ikuya
    Tanaka, Sho
    Kawamata, Shuichi
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [26] 8-band k.p modelling of mid-infrared intersubband absorption in Ge quantum wells
    Paul, D. J.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (04)
  • [27] Mid-infrared lasers operating on a single quantum well at the type II heterointerface
    Moiseev, KD
    Mikhailova, MP
    Yakovlev, YP
    Krier, A
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 534 - 535
  • [28] High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice
    Chen, Yaojiang
    Chai, Xuliang
    Xie, Zhiyang
    Deng, Zhuo
    Zhang, Ningtao
    Zhou, Yi
    Xu, Zhicheng
    Chen, Jianxin
    Chen, Baile
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 38 (04) : 939 - 945
  • [29] InGaAs/GaAsSb type-II quantum well focal plane array with cutoff-wavelength of 2.5 μm
    Kawahara, T.
    Machinaga, K.
    Sundararajan, B.
    Miura, K.
    Migita, M.
    Obi, H.
    Fuyuki, T.
    Fujii, K.
    Ishizuka, T.
    Inada, H.
    Iguchi, Y.
    QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, 10111
  • [30] Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808
    Yin, Min
    Krier, Anthony
    TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV, 2007, 6738 : 73808 - 73808
12345