Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k.p method\

被引：9
|
作者：
Chen, Baile [1 ]
Holmes, A. L., Jr. [1 ]
Khalfin, Viktor [2 ]
Kudryashov, Igor [2 ]
Onat, Bora. M. [2 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA
来源：
LASER TECHNOLOGY FOR DEFENSE AND SECURITY VIII | 2012年 / 8381卷
关键词：
k.p method; Type-II Quantum Well; Laser diode; Mid-infrared; optical gain;
D O I：
10.1117/12.918764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k . p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5x10(12) cm(-2), peak gain values around 2.6-2.7 mu m wavelengths of the order of 1000 cm(-1) can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2 mu m at room temperature.
引用
收藏
页数：7
相关论文
共 50 条
  • [31] Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method
    Ben Rejeb, S.
    Debbichi, M.
    Said, M.
    Gassenq, A.
    Tournie, E.
    Christol, P.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (32)
  • [32] Electrically-pumped VCSELs using type-II quantum wells for the mid-infrared
    Veerabathran, G. K.
    Sprengel, S.
    Andrejew, A.
    Amann, M. -C.
    SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XX, 2018, 10536
  • [33] Carrier capture in type-II quantum wells for optically pumped mid-infrared lasers
    Univ of Iowa, Iowa City, IA, United States
    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2000, : 64 - 65
  • [34] InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers
    Vurgaftman, I
    Meyer, JR
    Tansu, N
    Mawst, LJ
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4653 - 4655
  • [35] Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
    Huang, J. Y. T.
    Mawst, L. J.
    Kuech, T. F.
    Song, X.
    Babcock, S. E.
    Kim, C. S.
    Vurgaftman, I.
    Meyer, J. R.
    Holmes, A. L., Jr.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (02)
  • [36] InP-based Multiple Type-II Quantum-Well Integrated Waveguide p-i-n Photodiodes for Mid-Infrared Detection
    Tossoun, Bassem
    Wang, Ye
    Addamane, Sadhvikas
    Balakrishnan, Ganesh
    Holmes, Archie L., Jr.
    Beling, Andreas
    2017 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2017, : 175 - 176
  • [37] Mid-Infrared Emission in Ge/Ge1-xSnx/Ge Quantum Well Modeled Within 14-Band k.p Model
    Zitouni, Omar
    Mastour, Nouha
    Ridene, Said
    ELECTRONICS, 2024, 13 (21)
  • [38] Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes
    Jung, Seungyong
    Suchalkin, Sergey
    Kipshidze, Gela
    Westerfeld, David
    Golden, Eric
    Snyder, Donald
    Belenky, Gregory
    APPLIED PHYSICS LETTERS, 2010, 96 (19)
  • [39] Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate
    Inada, H.
    Miura, K.
    Iguchi, Y.
    Kawamura, Y.
    Murooka, J.
    Katayama, H.
    Kanno, S.
    Takekawa, T.
    Kimata, M.
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [40] High power mid-infrared interband cascade lasers based on type-II quantum wells
    Yang, RQ
    Yang, BH
    Zhang, D
    Lin, CH
    Murry, SJ
    Wu, H
    Pei, SS
    APPLIED PHYSICS LETTERS, 1997, 71 (17) : 2409 - 2411
12345