Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

被引：34

作者：

Huang, J. Y. T. ^{[1
]}

Mawst, L. J. ^{[1
]}

Kuech, T. F. ^{[2
]}

Song, X. ^{[3
]}

Babcock, S. E. ^{[3
]}

Kim, C. S. ^{[4
]}

Vurgaftman, I. ^{[4
]}

Meyer, J. R. ^{[4
]}

Holmes, A. L., Jr. ^{[5
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA

[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[4] USN, Res Lab, Washington, DC 20375 USA

[5] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 02期

关键词：

DISTRIBUTED-FEEDBACK LASERS; CRITICAL-LAYER THICKNESS; MU-M-WAVELENGTH; BAND PARAMETERS; OUTPUT POWER; PHOTOLUMINESCENCE; GAAS; SEMICONDUCTORS; DIODES;

D O I：

10.1088/0022-3727/42/2/025108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAs/GaAsSb type-II 'W' quantum wells (QWs) grown on InP substrates by metalorganic vapour phase epitaxy were investigated for potential emission wavelengths in the mid-infrared spectral region. Design studies using an 8-band k . p Hamiltonian model indicate that emission wavelengths near 3 mu m should be achievable without strain relaxation. Improved electron confinement can be achieved by adding higher-energy band gap alloys such as AlAsSb or GaInP around the type-II 'W' active region. Comparisons of the simulations with experiment indicate that photoluminescence (PL) spectra are consistent with a type-II band alignment. 4-periodtype-II 'W' In(0.8)Ga(0.2)As (similar to 4.0 nm)/GaAs(0.35)Sb(0.65) (similar to 1.5 nm) QWs separated by InP (5 nm) or AlAs(0.767)Sb(0.233) (1.5 nm) barrier layers, demonstrate room-temperature PL emission at similar to 2.1 mu m

引用

页数：8

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