GaAsSb/GaAs type-II quantum well and its application on ∼1.3 μm laser

被引：0
|
作者：
Lin, HH [1 ]
Liu, PW [1 ]
Chen, JR [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan
来源：
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年
关键词：
D O I：
10.1109/COS.2003.1278178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The band offset of the type-II GaAs0.7Sb0.3/GaAs quantum well (QW) is studied. We propose an extrapolation method to remove the band-bending effect and determine the flat-band transition energy of the type-II QW from photoluminescence (PL) measurement. Then, we compare the PL peak energies of the type-II GaAS(0.7)Sb(0.3)/GaAs QW and the type-I Al0.3Ga0.7As/GaAs0.7Sb0.3 QW to obtain the strained band gap energy of GaAs0.7Sb0.3 and the valence-band-offset ratio of the type-II QW. The obtained band gap energy and valence-band-offset ratio are 1.01 eV and 1.15. GaAsSb/GaAs double-quantum-well lasers were also grown and fabricated. The laser demonstrates a very low threshold current density of 210 A/cm(2) with an emission wavelength of 1.28mum.
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收藏
页码：112 / 115
页数：4
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