Simulation of Self-heating Effects on Heterojunction Bipolar Transistors

被引：0

作者：

Chang, Yang-Hua ^{[1
]}

Cai, Jia-Shiou ^{[1
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, 123 Univ Rd,Sec 3, Touliu 64002, Yunlin, Taiwan

来源：

IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS 2013 (ISNE 2013) | 2013年

关键词：

POWER DENSITIES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating effect in heterojunction bipolar transistors has been studied by using a finite element analysis software which allows for the consideration of device thickness and the boundary condition of convection. Compared to the conventional thermal-electro model, which neglects the device thickness and assumes the adiabatic boundary condition, the finite element analysis provides more accurate results, especially under high-power operations.

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页数：3

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