Analysis and simulation of self-heating effects on RE LDMOS devices

被引：0

作者：

Belaïd, MA ^{[1
]}

Ketata, K ^{[1
]}

Maanane, H ^{[1
]}

Gares, M ^{[1
]}

Mourgues, K ^{[1
]}

Marcon, J ^{[1
]}

机构：

[1] Univ Rouen, IUT Rouen, LEMI, F-76821 Mont St Aignan, France

来源：

SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a study of the temperature and self heating effects on RF LDMOS devices. A new electro-thermal model is implemented in Agilent's ADS, using a Symbolic Defined Device (SDD). The proposed model takes into account the thermal effects and the influence of temperature on the I-V and C-V characteristics, by providing three thermal resistances and three thermal capacitances, which represent the heat flow from the chip to the ambient air (thermal network). The new model is thoroughly assessed against extensive 2-D simulations performed using a numerical device model. The results indicate a good agreement with all operating conditions.

引用

页码：231 / 234

页数：4

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