Numerical simulation of semiconductor devices considering self-heating effects

被引：2

作者：

Hao, M ^{[1
]}

Tian, LL ^{[1
]}

Yu, ZP ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electro-thermal simulation, which considers the influence of self-heating effects on semiconductor devices, is becoming more and more important. But as the popular device simulator, PISCES-2ET needs a big improvement in order to realize the simulation including lattice temperature, for it paid more attention to carrier temperature but not lattice temperature. This paper presents an electro-thermal device simulation program which is developed on the base of device simulation program PISCES-2H. In comparison with PISCES-2ET, our program includes the influence of lattice temperature to Poisson's equation and electrical field and provides more thermal boundary conditions and temperature dependent models. What's more, Two additional numerical methods are adopted according to the characteristics of electro-thermal simulation in our program. They are more suitable for simulation considering self-heating effects than common gummel and full newton methods.

引用

页码：472 / 476

页数：3

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