Properties of InMnP (001) grown by MOVPE

We investigated growth and incorporation of Mn into InP (0 0 1) by metal-organic vapour phase epitaxy (MOVPE). Depending on the Mn/In ratio and temperature we found four different incorporation regimes. Flat mirror like layers with high Mn incorporation were either produced around 510 degrees C or around 600 degrees C. At higher temperatures or higher Mn-fluxes, the surfaces roughened. We achieved a maximum Mn incorporation around 0.6%, estimated by X-ray diffraction. The corresponding hole concentration was 1.7 x 10(17) cm(-3). The hole activation energy for the Mn acceptor in variable temperature Hall measurements was 220 meV, comparable to the onset of a broad photoluminescence. Due to this high activation energy the layers showed no spin polarization. (C) 2008 Elsevier B.V. All rights reserved.