Properties of InMnP (001) grown by MOVPE

被引：2
|
作者：
Pristovsek, M. [1 ]
Philippou, A. [1 ]
Raehmer, B. [1 ]
Richter, W. [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 18期
关键词：
doping; metal-organic vapour phase epitaxy; magnetic materials; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2008.06.069
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigated growth and incorporation of Mn into InP (0 0 1) by metal-organic vapour phase epitaxy (MOVPE). Depending on the Mn/In ratio and temperature we found four different incorporation regimes. Flat mirror like layers with high Mn incorporation were either produced around 510 degrees C or around 600 degrees C. At higher temperatures or higher Mn-fluxes, the surfaces roughened. We achieved a maximum Mn incorporation around 0.6%, estimated by X-ray diffraction. The corresponding hole concentration was 1.7 x 10(17) cm(-3). The hole activation energy for the Mn acceptor in variable temperature Hall measurements was 220 meV, comparable to the onset of a broad photoluminescence. Due to this high activation energy the layers showed no spin polarization. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：4046 / 4049
页数：4
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