Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study

被引：0
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作者：
J. Laifi
A. Bchetnia
机构：
[1] Physics Department,
[2] College of Science,undefined
[3] Jouf University,undefined
[4] Department of Physics,undefined
[5] College of Science,undefined
[6] Qassim University,undefined
[7] Unité de Recherche sur les Hétéro-Epitaxies et Applications,undefined
[8] Faculté des Sciences de Monastir 5019,undefined
[9] Université de Monastir,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
cubic GaN; hexagonal GaN; (; ) GaAs; carrier gas;
D O I：
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学科分类号：
摘要：
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页码：691 / 697
页数：6
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