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- [2] Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (10): : 2041 - 2044
- [3] Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9, 2012, 9 (8-9): : 1736 - 1739
- [5] The effect of substrate temperature upon the compositions of Mg and Se in Zn1-xMgxSeyTe1-y layer grown by MOVPE PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 2014, 11 (7-8): : 1202 - 1205
- [6] Properties of GaN epitaxial layer grown by MOVPE on MgAl2O4 substrate GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 61 - 66
- [7] Effects of substrate temperature upon photoluminescence and electrical properties of ZnTe in atmospheric pressure MOVPE using tris-dimethylaminophosphorus PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 1172 - +
- [8] Effects of substrate temperature on the properties of hydrogenated nanocrystalline silicon thin film grown by layer-by-layer technique 2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 472 - +
- [9] Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 781 - 784