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- [24] Electrical properties of InSb thin films with an InAsSb buffer layer grown by MOVPE PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 278 - 281
- [25] Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2099 - 2102
- [26] A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S393 - S396
- [27] Properties of InMnP (001) grown by MOVPE JOURNAL OF CRYSTAL GROWTH, 2008, 310 (18) : 4046 - 4049