Properties of InMnP (001) grown by MOVPE

被引：2
|
作者：
Pristovsek, M. [1 ]
Philippou, A. [1 ]
Raehmer, B. [1 ]
Richter, W. [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 18期
关键词：
doping; metal-organic vapour phase epitaxy; magnetic materials; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2008.06.069
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigated growth and incorporation of Mn into InP (0 0 1) by metal-organic vapour phase epitaxy (MOVPE). Depending on the Mn/In ratio and temperature we found four different incorporation regimes. Flat mirror like layers with high Mn incorporation were either produced around 510 degrees C or around 600 degrees C. At higher temperatures or higher Mn-fluxes, the surfaces roughened. We achieved a maximum Mn incorporation around 0.6%, estimated by X-ray diffraction. The corresponding hole concentration was 1.7 x 10(17) cm(-3). The hole activation energy for the Mn acceptor in variable temperature Hall measurements was 220 meV, comparable to the onset of a broad photoluminescence. Due to this high activation energy the layers showed no spin polarization. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：4046 / 4049
页数：4
相关论文
共 50 条
  • [1] Magnetic properties of MnAs thin films grown on GaAs (001) by MOVPE
    Sterbinsky, G. E.
    May, S. J.
    Chiu, P. T.
    Wessels, B. W.
    PHYSICA B-CONDENSED MATTER, 2007, 388 (1-2) : 370 - 373
  • [2] Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates
    Paszkiewicz, R.
    Paszkiewicz, B.
    Wosko, M.
    Szyszka, A.
    Marciniak, L.
    Prazmowska, J.
    Macherzynski, W.
    Serafinczuk, J.
    Kozlowski, J.
    Tlaczala, M.
    Kovac, J.
    Novotny, I.
    Skriniarova, J.
    Hasko, D.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4891 - 4895
  • [3] The role of surface adsorbates on electrical properties of MOVPE grown HgCdTe onto (001) GaAs substrates
    Kim, JS
    Kim, YH
    Kim, BK
    Je, HJ
    SOLID-STATE ELECTRONICS, 2004, 48 (09) : 1623 - 1627
  • [4] Atomic surface structure of MOVPE-grown InP(001)
    Vogt, P
    Frisch, AM
    Hannappel, T
    Visbeck, S
    Willig, F
    Jung, C
    Esser, N
    Braun, W
    Richter, W
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 215 (01): : 737 - 742
  • [5] InAsN quantum dots grown on GaAs(001) substrates by MOVPE
    Kuboya, S.
    Thieu, Q. T.
    Nakajima, F.
    Katayama, R.
    Onabe, K.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2387 - +
  • [6] Etching behavior of GaN/GaAs(001) epilayers grown by MOVPE
    Shen, Xiaoming
    Feng, Zhihong
    Feng, Gan
    Fu, Yi
    Zhang, Baoshun
    Sun, Yuanping
    Zhang, Zehong
    Yang, Hui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (07): : 707 - 712
  • [7] Blue light emitting diodes on Si(001) grown by MOVPE
    Schulze, F.
    Dadgar, A.
    Bertram, F.
    Blaesing, J.
    Diez, A.
    Veit, P.
    Clos, R.
    Christen, J.
    Krost, A.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1, 2007, 4 (01): : 41 - +
  • [8] Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (001)
    Laifi, J.
    Chaaben, N.
    Bouazizi, H.
    Fourati, N.
    Zerrouki, C.
    El Gmili, Y.
    Bchetnia, A.
    Salvestrini, J. P.
    El Jani, B.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 : 472 - 482
  • [9] Optical and structural properties of InGaAsP miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates
    Vavilova, LS
    Vinokurov, DA
    Kapitonov, VA
    Murashova, AV
    Nevedomskii, VN
    Poletaev, NK
    Sitnikova, AA
    Tarasov, IS
    Shamakhov, VV
    SEMICONDUCTORS, 2003, 37 (09) : 1080 - 1084
  • [10] Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substrates
    L. S. Vavilova
    D. A. Vinokurov
    V. A. Kapitonov
    A. V. Murashova
    V. N. Nevedomskii
    N. K. Poletaev
    A. A. Sitnikova
    I. S. Tarasov
    V. V. Shamakhov
    Semiconductors, 2003, 37 : 1080 - 1084
12345