Photothermal Superheating of Water with Ion-Implanted Silicon Nanowires

被引：4
|
作者：
Roder, Paden B. [1 ]
Manandhar, Sandeep [1 ,2 ]
Smith, Bennett E. [3 ]
Zhou, Xuezhe [1 ]
Shutthanandan, Vaithiyalingam S. [2 ]
Pauzauskie, Peter J. [1 ,4 ]
机构：
[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
[2] PNNL, EMSL, Richland, WA 99354 USA
[3] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[4] PNNL, Fundamental & Computat Sci Directorate, Richland, WA 99354 USA
来源：
ADVANCED OPTICAL MATERIALS | 2015年 / 3卷 / 10期
关键词：
POROUS SILICON; GOLD NANOPARTICLES; RAMAN-SCATTERING; DRUG-DELIVERY; THERAPY; NANOCRYSTALS; SHAPE; NANOSCALE; SIZE; NANOSTRUCTURES;
D O I：
10.1002/adom.201500143
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1362 / 1367
页数：6
相关论文
共 50 条
  • [21] STRUCTURAL DISORDER IN ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BAUER, LO
    ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S157 - S157
  • [22] LASER PROCESSING OF ION-IMPLANTED SILICON
    APPLETON, BR
    WHITE, CW
    LARSON, BC
    WILSON, SR
    NARAYAN, J
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1686 - 1692
  • [23] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
    FAIR, RB
    TSAI, JCC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C258 - C258
  • [24] ION-IMPLANTED SILICON PROFILES IN GAAS
    LEE, DH
    MALBON, RM
    APPLIED PHYSICS LETTERS, 1977, 30 (07) : 327 - 329
  • [25] Athermal anneaung of ion-implanted silicon
    Lojek, B
    Whiteman, N
    Abrenkiel, R
    9TH INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2001, 2001, : 125 - 131
  • [26] PAC STUDIES OF ION-IMPLANTED SILICON
    FORKEL, D
    MEYER, F
    WITTHUHN, W
    WOLF, H
    DEICHER, M
    UHRMACHER, M
    HYPERFINE INTERACTIONS, 1987, 35 (1-4): : 715 - 718
  • [27] DAMAGE PROFILES IN ION-IMPLANTED SILICON
    TKACHEV, VD
    HOLZER, G
    CHELYADINSKII, AR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : K43 - K46
  • [28] DISPLACEMENT AND RECOIL IN ION-IMPLANTED SILICON
    MEDA, L
    CEROFOLINI, GF
    OTTAVIANI, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 454 - 456
  • [29] AVOIDING DISLOCATIONS IN ION-IMPLANTED SILICON
    SARIS, FW
    CUSTER, JS
    SCHREUTELKAMP, RJ
    LIEFTING, RJ
    WIJBURG, R
    WALLINGA, H
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 357 - 362
  • [30] Internal friction in ion-implanted silicon
    Liu, X
    Pohl, RO
    Crandall, RS
    Jones, KM
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 419 - 424
12345