PAC STUDIES OF ION-IMPLANTED SILICON

被引：12
|
作者：
FORKEL, D
MEYER, F
WITTHUHN, W
WOLF, H
DEICHER, M
UHRMACHER, M
机构：
[1] UNIV CONSTANCE,INST PHYS,D-7750 CONSTANCE,FED REP GER
[2] UNIV GOTTINGEN,INST PHYS,D-3400 GOTTINGEN,FED REP GER
来源：
HYPERFINE INTERACTIONS | 1987年 / 35卷 / 1-4期
关键词：
D O I：
10.1007/BF02394483
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
引用
收藏
页码：715 / 718
页数：4
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