Device Structural Effects on Negative-Capacitance FETs

被引：0
|
作者：
Su, Pin [1 ]
You, Wei-Xiang
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses several device structural effects on negative-capacitance FETs (NCFETs) with emphasis on the wide-range average subthreshold swing. We point out and explain the intrinsic difference between SOI and double-gate 2D NCFETs. The impact of drain coupling on the NC effect and its implication on the design of short-channel NC-FinFETs are also addressed.
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页数：2
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