Characteristic comparison of connected DG FINFET, TG FINFET and Independent Gate FINFET on 32 nm technology

This paper describes the comparative study of different performance parameters for connected DG FINFET, tri-gate FINFET and Independent Gate FINFET. The characteristic parameters, which are drain current, threshold voltage, DIBL and Subthershold slope were evaluated with the help of 3-D TCAD Device simulator on 32nm technology. As the number of gates increases, the electrostatic control on the channel increases leading to the decrease in short channel effect. To overcome the short channel effect a suitable threshold voltage is required with the scaling trend in device dimension. The threshold voltage variation is obtained by varying metal gate work function in DG and TG FINFET while in IG FINFET the threshold voltage is varied by changing one of the gate voltage.