Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

被引：20

作者：

Park, Ju Hyun ^{[1
]}

Kim, Hee-Dong ^{[1
]}

Hong, Seok Man ^{[1
]}

Yun, Min Ju ^{[1
]}

Jeon, Dong Su ^{[1
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

resistive switching; ReRAM; silicon nitride; charge trapping; silicon; dangling bonds; NITRIDE;

D O I：

10.1002/pssr.201308309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：239 / 242

页数：4

共 50 条

[31] Resistive Switching Memory Devices Based on Proteins
Wang, Hong
Meng, Fanben
Zhu, Bowen
Leow, Wan Ru
Liu, Yaqing
Chen, Xiaodong
[J]. Advanced Materials, 2015, : 7670 - 7676
[32] Control of resistive switching behaviors of solution- processed HfOX-based resistive switching memory devices by n-type doping
Akbari, Masoud
Lee, Jang-Sik
[J]. RSC ADVANCES, 2016, 6 (26) : 21917 - 21921
[33] Presetting conductive pathway induced the switching uniformity evolution of a-SiNx:H resistive switching memory
Sun, Yang
Ma, Zhongyuan
Jiang, Xiaofan
Tan, Dingwen
Zhang, Hui
Zhang, Xinxin
Liu, Jian
Yang, Huafeng
Li, Wei
Xu, Ling
Chen, Kunji
Feng, Duan
[J]. NANOTECHNOLOGY, 2018, 29 (41)
[34] Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells
Kim, Hee-Dong
An, Ho-Myoung
Kim, Tae Geun
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) : 2302 - 2307
[35] Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices
Lee, Myoung-Jae
Lee, Chang Bum
Lee, Dongsoo
Lee, Seung Ryul
Hur, Jihyun
Ahn, Seung-Eon
Chang, Man
Kim, Young-Bae
Chung, U-In
Kim, Chang-Jung
Kim, Dong-Sik
Lee, Hosun
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 725 - 727
[36] Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories Through Oxygen Doping
Vasileiadis, Nikolaos
Karakolis, Panagiotis
Mandylas, Panagiotis
Ioannou-Sougleridis, Vassilios
Normand, Pascal
Perego, Michele
Komninou, Philomela
Ntinas, Vasileios
Fyrigos, Iosif-Angelos
Karafyllidis, Ioannis
Sirakoulis, Georgios Ch.
Dimitrakis, Panagiotis
[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2021, 20 : 356 - 364
[37] Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)
Liu, Li-Feng
Kang, Jin-Feng
Tang, Hao
Xu, Nuo
Sun, Xiao
Chen, Chen
Sun, Bing
Wang, Yi
Liu, Xiao-Yan
Zhang, Xing
Han, Ru-Qi
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (10)
[38] Complementary resistive switching in tantalum oxide-based resistive memory devices
Yang, Yuchao
Sheridan, Patrick
Lu, Wei
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (20)
[39] Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory
Nam, Ki-Hyun
Kim, Jang-Han
Cho, Won-Ju
Kim, Chung-Hyeok
Chung, Hong-Bay
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (10) : 10393 - 10396
[40] Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
Liu, Xinjun
Sadaf, Sharif Md.
Park, Sangsu
Kim, Seonghyun
Cha, Euijun
Lee, Daeseok
Jung, Gun-Young
Hwang, Hyunsang
[J]. IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 235 - 237

← 1 2 3 4 5 →