Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

被引：20
|
作者：
Park, Ju Hyun [1 ]
Kim, Hee-Dong [1 ]
Hong, Seok Man [1 ]
Yun, Min Ju [1 ]
Jeon, Dong Su [1 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
resistive switching; ReRAM; silicon nitride; charge trapping; silicon; dangling bonds; NITRIDE;
D O I：
10.1002/pssr.201308309
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：239 / 242
页数：4
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