Improving the electrical performance of resistive switching memory using doping technology

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作者：
WANG Yan LIU Qi L HangBing LONG ShiBing WANG Wei LI YingTao ZHANG Sen LIAN WenTai YANG JianHong LIU Ming College of Physical Science and Technology Lanzhou University Lanzhou China Laboratory of NanoFabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Beijing China [1 ,2 ,2 ,2 ,2 ,1 ,1 ,2 ,2 ,2 ,1 ,2 ,1 ,730000 ,2 ,100029 ]
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Chinese Science Bulletin | 2012年 / 57卷 / 11期
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摘要：
In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.
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页数：6
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