Characteristics of Nb junctions with additional Al/Alox

被引:0
|
作者
Sugiyama, H [1 ]
Kobata, K [1 ]
Fujimaki, A [1 ]
Hayakawa, H [1 ]
机构
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We systematically investigated the characteristics of Nb/Al/AlOx/Al/AlOx/Nb junctions having a structure in which Al/AlOx films are placed in a Nb/Al/AlOx/Nb trilayer junction. The junction characteristics reflect superconductivity in the second Al film due to the proximity effect. As a result, the critical current density J(c) and the hysteresis on its current-voltage (I-V) curve strongly depend on the transparencies of the AlOx barriers. The hystereses of the junctions are smaller than those of Nb/Al/ AlOx/Nb junctions at the same J(c). Intrinsically overdamped junctions are also realized. The intrinsically overdamped junctions can considerably reduce an area occupied by a single gate. Furthermore, the spread of critical current I-c for the junctions, which have hystereses, connected in series, is +/-1.2%. This shows that the junctions with additional Al/AlOx have uniform enough characteristics to be used in integrated circuits. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码:483 / 489
页数:7
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