Electronic cooling in Nb/AlOX/Al/AlOX/Nb double tunnel junctions

被引：5
|
作者：
Capogna, L
Burnell, G
Blamire, MG
机构：
[1] UNIV SALERNO,DIPARTIMENTO FIS,I-84100 SALERNO,ITALY
[2] UNIV CAMBRIDGE,DEPT MAT SCI,CAMBRIDGE CB2 3QZ,ENGLAND
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1997年 / 7卷 / 02期
关键词：
D O I：
10.1109/77.621727
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several recent papers have predicted the feasibility of superconducting tunnel junction-based electronic cryocooler devices operating in the temperature range 0.1 - 4K. We have extended previous work in stacked Nb/AlOx devices to investigate the nonequilibrium effects in them and to examine the influence of barrier conductance and layer thickness on the electronic cooling achievable by this technique, We have also analysed the maximum cooling possible with junctions of our present conductance.
引用
收藏
页码：2415 / 2418
页数：4
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