Possible manifestation of Andreev bound states in double-barrier Nb/Al/AlOx/Al/AlOx/Nb tunnel junctions

被引：11
|
作者：
Nevirkovets, IP
Ketterson, JB
Shafranjuk, SE
Lomatch, S
机构：
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] NASU, Inst Magnetism, UA-252680 Kiev 142, Ukraine
[3] Motorola Inc, Wireless Access Syst Div, Arlington Hts, IL 60004 USA
来源：
PHYSICS LETTERS A | 2000年 / 269卷 / 04期
关键词：
superconductivity; tunneling; Josephson effect; Andreev reflection; Andreev bound states;
D O I：
10.1016/S0375-9601(00)00263-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have experimentally investigated electron transport in double-barrier Nb/Al/AlOx/Al/AlOx/Nb devices. At low temperatures, the devices reveal a novel magnetic-field-sensitive subgap structure in the current-voltage characteristics, which is interpreted as a manifestation of Andreev bound states. A correlation between phase-coherent and nonequilibrium properties is suggested. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：238 / 244
页数：7
相关论文
共 50 条
  • [1] Phase coherence between external electrodes in double-barrier Nb/Al-AlOx-Al-AlOx-Nb tunnel junctions
    Nevirkovets, IP
    Ketterson, JB
    Shafranjuk, SE
    [J]. PHYSICA B, 2000, 284 : 1834 - 1835
  • [2] Electronic cooling in Nb/AlOX/Al/AlOX/Nb double tunnel junctions
    Capogna, L
    Burnell, G
    Blamire, MG
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 2415 - 2418
  • [3] Nb/AlOx/Al/AlOx/Nb double-barrier junctions with high critical current densities:: Influence of barrier asymmetry
    Tolpygo, SK
    Brinkman, A
    Golubov, AA
    Kupriyanov, MY
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2003, 13 (02) : 138 - 141
  • [4] Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices
    Nevirkovets, IP
    Ketterson, JB
    Lomatch, S
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1624 - 1626
  • [5] Investigation of double-barrier Nb-Al-AlOx-Al-AlOx-(Al-)Nb junctions under high-frequency irradiation
    Nevirkovets, IP
    Ketterson, JB
    Siegel, M
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) : 1138 - 1141
  • [6] Properties of superconducting Nb/Al/Nb/Al-AlOx-Al-AlOx-Al/Nb/Al/Nb tunnel junctions
    Nevirkovets, IP
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 647 - 648
  • [7] NOVEL HYSTERESIS EFFECTS IN NB/ALOX/AL/ALOX/NB TUNNEL-JUNCTIONS
    BLAMIRE, MG
    KIRK, ECG
    SOMEKH, RE
    EVETTS, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2376 - 2381
  • [8] Single-electron transistors based on Al/AlOx/Al and Nb/AlOx/Nb tunnel junctions
    Bluthner, K
    Gotz, M
    Hadicke, A
    Krech, W
    Wagner, T
    Muhlig, H
    Fuchs, HJ
    Hubner, U
    Schelle, D
    Kley, EB
    Fritzsch, L
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 3099 - 3102
  • [9] Unusual I/V characteristics of Nb/Al/AlOx/Al/AlOx/Nb SINIS tunnel junctions
    Nevirkovets, IP
    Ketterson, JB
    Rowell, JM
    [J]. SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING IV, 2000, 4058 : 212 - 219
  • [10] Measurements of tunneling barrier thicknesses for Nb/Al-AlOx/Nb tunnel junctions
    Kang, Xinjie
    Ying, Liliang
    Wang, Hai
    Zhang, Guofeng
    Peng, Wei
    Kong, Xiangyan
    Xie, Xiaoming
    Wang, Zhen
    [J]. PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2014, 503 : 29 - 32
12345