Anomalous critical current in double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices

被引：28
|
作者：
Nevirkovets, IP [1 ]
Ketterson, JB
Lomatch, S
机构：
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
[3] Natl Acad Sci Ukraine, Inst Phys Met, UA-252680 Kiev, Ukraine
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 11期
关键词：
D O I：
10.1063/1.123637
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Double-barrier Nb/Al-AlOx-Al-AlOx-Nb devices with a "dirty'' middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found. (C) 1999 American Institute of Physics. [S0003-6951(99)02011-2].
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页码：1624 / 1626
页数：3
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