Sub-gap leakage in Nb/AlOx/Nb and Al/AlOx/Al Josephson junctions

被引:13
|
作者
Gubrud, MA [1 ]
Ejrnaes, M
Berkley, AJ
Ramos, RC
Jin, I
Anderson, JR
Dragt, AJ
Lobb, CJ
Wellstood, FC
机构
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Tech Univ Denmark, DK-2800 Lyngby, Denmark
关键词
decoherence; dissipation; Josephson junctions; quantum computation;
D O I
10.1109/77.919518
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In an effort to determine the suitability of Josephson junctions for applications in quantum computation, we measured low-noise de current-voltage characteristics of Nb/AlOx/Nb and Al/AlOx/Al junctions in the temperature range from 90 mK to 1 K, Nb-based samples were obtained from several different facilities with critical currents of a few muA and critical current densities between 100 and 3000 A/cm(2), We fabricated the Al-based samples using double-angle evaporation and obtained critical currents of a few muA with critical current densities of about 30 A/cm(2). We found that the sub-gap leakage current in the Nb-based samples does not depend on temperature in the range 90 mK to 1 K,whereas that for the Al-based samples follows the expected BCS behavior to about 150 mK, Our Al-based samples have a lower level of dissipation than Nb-based devices; however, both Al- and Nb-based samples achieved dissipation levels sufficiently low for some quantum computing applications.
引用
收藏
页码:1002 / 1005
页数:4
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