Fabrication of Nb/AlOx/Al/AlOx/Nb junctions for voltage standard applications

被引:2
|
作者
Maezawa, M.
Urano, C.
Kaneko, N.
Kiryu, S.
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058586, Japan
[2] Musashi Inst Technol, Tokyo 1588557, Japan
关键词
josephson junction; SINIS-junction; josephson arbitrary waveform synthesizer; digital-to-analog converter; voltage standard;
D O I
10.1016/j.physc.2007.02.040
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an overdamped superconductor-insulator-normal-insulator-superconductor (SINIS) junction technology for ac voltage standard applications. Modifying our standard Nb-junction process, we developed a simple process for Nb/AIO(chi)/Al/AIO(chi)/Nb-junction circuits. A Josephson arbitrary waveform synthesizer device which consisted of a 100-SINIS-junction array embedded in a 50 Omega coplanar waveguide was fabricated and successfully tested. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:969 / 974
页数:6
相关论文
共 50 条
  • [1] Nb/Al/AlOx/AlOx/Al/Nb Josephson junctions for programmable voltage standards
    Schulze, H
    Behr, R
    Muller, F
    Niemeyer, J
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 996 - 998
  • [2] Characteristics of Nb/Al/AlOx/Al/AlOx/Nb junctions based on the proximity effect
    Sugiyama, H
    Yanada, A
    Ota, M
    Fujimaki, A
    Hayakawa, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1157 - L1160
  • [3] Properties of superconducting Nb/Al/Nb/Al-AlOx-Al-AlOx-Al/Nb/Al/Nb tunnel junctions
    Nevirkovets, IP
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 647 - 648
  • [4] Electronic cooling in Nb/AlOX/Al/AlOX/Nb double tunnel junctions
    Capogna, L
    Burnell, G
    Blamire, MG
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 2415 - 2418
  • [5] Fabrication and characterization of single-electron transistors based on Al/AlOx/Al and Nb/AlOx/Nb tunnel junctions
    Bluthner, K
    Gotz, M
    Krech, W
    Muhlig, H
    Wagner, T
    Fuchs, HJ
    Schelle, D
    Fritzsch, L
    Nachtmann, B
    Nowack, A
    [J]. JOURNAL DE PHYSIQUE IV, 1996, 6 (C3): : 163 - 167
  • [6] Sub-gap leakage in Nb/AlOx/Nb and Al/AlOx/Al Josephson junctions
    Gubrud, MA
    Ejrnaes, M
    Berkley, AJ
    Ramos, RC
    Jin, I
    Anderson, JR
    Dragt, AJ
    Lobb, CJ
    Wellstood, FC
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) : 1002 - 1005
  • [7] NOVEL HYSTERESIS EFFECTS IN NB/ALOX/AL/ALOX/NB TUNNEL-JUNCTIONS
    BLAMIRE, MG
    KIRK, ECG
    SOMEKH, RE
    EVETTS, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2376 - 2381
  • [8] Single-electron transistors based on Al/AlOx/Al and Nb/AlOx/Nb tunnel junctions
    Bluthner, K
    Gotz, M
    Hadicke, A
    Krech, W
    Wagner, T
    Muhlig, H
    Fuchs, HJ
    Hubner, U
    Schelle, D
    Kley, EB
    Fritzsch, L
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) : 3099 - 3102
  • [9] Nb/Al-AlOx/Nb overdamped junctions suitable for voltage standard operation above 4.2 K
    Lacquaniti, Vincenzo
    De Leo, Natascia
    Fretto, Matteo
    Sosso, Andrea
    [J]. 2008 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST, 2008, : 106 - 107
  • [10] Unusual I/V characteristics of Nb/Al/AlOx/Al/AlOx/Nb SINIS tunnel junctions
    Nevirkovets, IP
    Ketterson, JB
    Rowell, JM
    [J]. SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING IV, 2000, 4058 : 212 - 219