A Junctionless Gate-All-Around Silicon Nanowire FET of High Linearity and Its Potential Applications

被引：61
|
作者：
Wang, Tao [1 ]
Lou, Liang [2 ]
Lee, Chengkuo [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Agcy Sci Technol & Res, Inst Microelect, Singapore 138632, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期
关键词：
Third-order intermodulation (IM3); linearity; silicon nanowire (SiNW) FET;
D O I：
10.1109/LED.2013.2244056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. The SiNW FET shows a perfectly linear I-D-V-G relation and a nearly zero output conductance. The mechanism of its linear behaviors due to degenerate doping level has been also demonstrated. For RF applications, the proposed SiNW FET exhibits a much lower distortion for a whole range of load resistance, making it superior to modern short-channel MOSFET.
引用
收藏
页码：478 / 480
页数：3
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