Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature

BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT(1)) and sputtering method (label: PZT(2)) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT(1) structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT(1) structure compared with BFO/PZT(2). The remnant polarization of the BFO/PZT(1) was 82.5 mu C/cm(2) at an applied voltage of 8 V, compared with that of 25.2 mu C/cm(2) in the BFO/PZT(2) structure. The BFO/PZT(1) multilayer exhibited little polarization fatigue (<1.5%) upon 1x10(10) switching cycles, at an applied voltage of 4 V. The leakage current density was about 2x10(-7) A/cm(2) at an applied voltage 4 V, in the BFO/PZT(1) capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.