Mechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors

被引:43
|
作者
Kang, BS
Yoon, JG
Kim, DJ
Noh, TW
Song, TK
Lee, YK
Lee, JK
Park, YS
机构
[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea
[4] Samsung Adv Inst Technol, Suwon 440600, South Korea
[5] Univ Suwon, Dept Phys, Kyonggi Do 445743, South Korea
关键词
D O I
10.1063/1.1563833
中图分类号
O59 [应用物理学];
学科分类号
摘要
The switching current profiles of ferroelectric Pt/Pb(Zr0.4Ti0.6)O-3/Pt capacitors were investigated after high-temperature baking to elucidate the mechanisms for retention loss. In the same-state retention, a decrease in the peak value of switching current and increase in the switching time were observed. These changes in the switching characteristics were attributed to the growth of an internal field. By comparing with the switching characteristics of a virgin capacitor and using the Merz equations, we estimated quantitatively the magnitude of the internal field. In the opposite-state retention, backswitching of polarization, triggered by the internal field, was found to be the main cause of the retention loss. (C) 2003 American Institute of Physics.
引用
收藏
页码:2124 / 2126
页数:3
相关论文
共 50 条
  • [1] Imprint and fatigue properties of Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitor
    Jia, Ze
    Liu, Tian-zhi
    Hu, Hong
    Ren, Tian-ling
    Zhang, Zhi-gang
    Xie, Dan
    Liu, Li-tian
    INTEGRATED FERROELECTRICS, 2006, 85 : 67 - 75
  • [2] Fabrication and properties of Ru/Pb(Zr0.4Ti0.6)O3/Pt capacitor
    Hu, Hong
    Jia, Ze
    Liu, Tian-zhi
    Xie, Dan
    Zhang, Zhi-gang
    Ren, Tian-ling
    Liu, Li-tian
    INTEGRATED FERROELECTRICS, 2006, 84 : 219 - 225
  • [3] Investigation of Structural and Physical Properties of Pt/Pb(Zr0.4Ti0.6)O3/ITO Capacitors Fabricated on Glass Substrate
    Zhou Yang
    Cheng Chun-Sheng
    Zhao Jing-Wei
    Zheng Hong-Fang
    Zhao Qing-Xun
    Peng Ying-Cai
    Liu Bao-Ting
    JOURNAL OF INORGANIC MATERIALS, 2010, 25 (03) : 242 - 246
  • [4] Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes
    Kang, BS
    Kim, DJ
    Jo, JY
    Noh, TW
    Yoon, JG
    Song, TK
    Lee, YK
    Lee, JK
    Shin, S
    Park, YS
    APPLIED PHYSICS LETTERS, 2004, 84 (16) : 3127 - 3129
  • [5] Mechanism of charge retention loss in ferroelectric Pt/Pb(Zr,Ti)O3/Pt capacitors and its relation to fatigue and imprint
    Yoon, JG
    Kang, BS
    Kim, JD
    Noh, TW
    Song, TK
    Lee, YK
    Lee, JK
    INTEGRATED FERROELECTRICS, 2003, 53 : 401 - 411
  • [7] Effective orientation control of Pb(Zr0.4Ti0.6)O3 thin films using a new Ti/Pb(Zr0.4Ti0.6)O3 seeding layer
    Moon, BK
    Arisumi, O
    Hornik, K
    Bruchhaus, R
    Itokawa, H
    Hilliger, A
    Zhuang, H
    Egger, U
    Nakazawa, K
    Yamazaki, S
    Ozaki, T
    Nagel, N
    Kunishima, I
    Yamakawa, K
    Beitel, G
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 177 - 188
  • [8] Energy Storage Performance of Sandwich Structured Pb(Zr0.4Ti0.6)O3/BaZr0.2Ti0.8O3/Pb(Zr0.4Ti0.6)O3 Films
    Gu, Jinxin
    Sun, Qiu
    Chen, Xiangqun
    Song, Ying
    Tang, YiLun
    Wang, Dongbo
    Qu, Ping
    CRYSTALS, 2019, 9 (11):
  • [9] Depolarization characteristics in sol-gel ferroelectric Pb(Zr0.4Ti0.6)O3 thin-film capacitors
    Mihara, Takashi
    Yoshimori, Hiroyuki
    Watanabe, Hitoshi
    Paz de Araujo, Carlos A.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (5 A): : 2380 - 2388
  • [10] InducingeffectofPb(Zr0.4Ti0.6)O3thinfilmderivedbydifferentprocessesinBiFeO3/Pb(Zr0.4Ti0.6)O3multilayercapacitoratroomtemperature
    XIE Dan ZANG YongYuan LUO YaFeng REN TianLing LIU LiTian DANG ZhiMin Institute of MicroelectronicsTsinghua UniversityBeijing ChinaCollege of Material Science and EngineeringBeijing University of Chemical TechnologyBeijing China
    中国科学:技术科学, 2010, 40 (04) : 427 - 427